1996. 11. 16
1/2
SEMICONDUCTOR
TECHNICAL DATA
KDV147
Revision No : 1
FM RADIO BAND TUNING APPLICATION.
FEATURES
Low r
S
: r
S
=0.3 (Typ.).
Small Package.
MAXIMUM RATINGS (Ta=25 )
1
2
3
TO-92M
DIM MILLIMETERS
A
B
C
D
E
F
G
H
J
K
1. ANODE 1
3. ANODE 2
2. CATHODE 1, 2
3.20 MAX
4.30 MAX
0.55 MAX
2.40 0.15
1.27
2.30
14.00 0.50
0.60 MAX
1.05
1.45
25
0.55 MAX
L
M
N
F
A
G
J
K
D
E
E
L
N
M
C
H
0.80
O
0.75
O
B
+
_
+
_
1
2
3
ELECTRICAL CHARACTERISTICS (Ta=25 )
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
CLASSIPICATION OF CAPACITANCE GRADE
CHARACTERISTIC
SYMBOL
RATING
UNIT
Reverse Voltage
V
R
15
V
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Reverse Voltage
V
R
I
R
=10 A
15
-
-
V
Reverse Current
I
R
V
R
=15V
-
-
50
nA
Capacitance
C
2V
V
R
=2V, f=1MHz
34.0
-
39.5
pF
C
8V
V
R
=8V, f=1MHz
11.7
-
13.7
Capacitance Ratio
C
2V
/C
8V
2.7
2.95
3.2
Series Resistance
r
S
C=30pF, f=50MHz
-
0.3
0.5
GRADE
CAPACITANCE (C
2V
)
UNIT
A
34.0 35.5
pF
B
35.0 36.5
C
36.0 37.5
D
37.0 38.5
E
38.0 39.5
Note : r
S
test circuit
Hi
A1
A2
Q METER
H.P
MODEL 4342A
Lo
K
R
V
100k
1000pF
C is A1 - A2 capacitance.
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